数字农科院2.0

Defect-Mediated Exciton Localization and Relaxation in Monolayer MoS2

文献类型： 外文期刊

作者： Jiafan Qu;Yadong Wei;Liang Zhao;Ruoxi Tan;Weiqi Li;Hongyan Shi;Yueling Zhang;Jianqun Yang;Bo Gao;Xingji Li

作者机构：

关键词： C exciton;defect;exciton localization;exciton relaxation;monolayer MoS2

期刊名称： ACS Nano

ISSN： 1936-0851

年卷期： 2025 年 18 卷 50 期

页码：

收录情况： SCIE（2024版） ; ; EI（2024版）

摘要： Defects in chemical vapor deposition (CVD)-grown monolayer MoS2 are unavoidable and provide a powerful approach to creating single-photon emitters and quantum information systems through localizing excitons. However, insight into the A- trion and B/C exciton localization in monolayer MoS2 remains elusive. Here, we investigate defect-mediated A- trion and B/C exciton localization and relaxation in CVD-grown monolayer MoS2 samples via transient absorption spectroscopy. The localization rate of A- trions is five times faster than B excitons, which is attributed to the distinctions in the Bohr radius, diffusion rate, and multiphonon emission. Furthermore, we obtain unambiguous experimental evidence for the direct excitation of localized C excitons. Varying gap energy at the band-nesting region revealed by first-principles calculations explains the anomalous dependence of localized C exciton energy on delay time. We also find that the rapid dissociation of localized C excitons features a short characteristic time of ∼0.14 ps, while the measured relaxation time is much longer. Our results provide a comprehensive picture of the defect-mediated excitonic relaxation and localization dynamics in monolayer MoS2

分类号：

  • 相关文献
作者其他论文 更多>>